//Created by Paulo Aguiar [pauloaguiar@fc.up.pt]
// IMPORTANT NOTE:
// The iKCa current is not necessary but provide an idea on how activity control can be achieved.
// The early, but truncated increase in the evoked APs results from the interaction between NK1R and iKCa
// Remove the iKCa, but renormalize the inputs, if you want a slow and monotonic increase in the evoked APs
// CREATE INTERNEURON
begintemplate Interneuron
public soma, dendrite, hillock, axon
create soma, dendrite, hillock, axon
proc init() {
create soma
soma {
nseg = 3
L = 20.0
diam = 20.0
//HH channels: iNat and iK
insert HH2 {
gnabar_HH2 = 0.08
gkbar_HH2 = 0.02
vtraub_HH2 = -55.0
}
//intracellular Ca dynamics
insert CaIntraCellDyn {
depth_CaIntraCellDyn = 0.1
cai_tau_CaIntraCellDyn = 1.0
cai_inf_CaIntraCellDyn = 50.0e-6
}
//potassium current dependent on intracellular calcium concentration
insert iKCa {
gbar_iKCa = 0.002 //0.002
}
ek = -70.0
Ra = 150.0
insert pas
g_pas = 4.2e-5
e_pas = -65.0
}
create dendrite
dendrite {
nseg = 5
L = 500.0
diam = 4.0
//intracellular Ca dynamics
insert CaIntraCellDyn {
depth_CaIntraCellDyn = 0.1
cai_tau_CaIntraCellDyn = 2.0
cai_inf_CaIntraCellDyn = 50.0e-6
}
//potassium current dependent on intracellular calcium concentration
insert iKCa {
gbar_iKCa = 0.002 //0.002
}
ek = -70.0
Ra = 150.0
insert pas
g_pas = 4.2e-5
e_pas = -65.0
}
create hillock
hillock {
nseg = 3
L = 3.0
diam(0:1) = 2.0:1.0
//HH channels: iNa,t and iK
insert HH2 {
gnabar_HH2 = 0.1
gkbar_HH2 = 0.04
vtraub_HH2 = -55.0
}
Ra = 150.0
insert pas
g_pas = 4.2e-5
e_pas = -65.0
}
create axon
axon {
nseg = 5
L = 1000.0
diam = 1.0
//HH channels: iNa,t and iK
insert HH2 {
gnabar_HH2 = 0.1
gkbar_HH2 = 0.04 //0.06
vtraub_HH2 = -55
}
Ra = 150.0
insert pas
g_pas = 4.2e-5
e_pas = -65.0
}
//CONNECTIONS
soma connect hillock(0),1
hillock connect axon(0),1
soma connect dendrite(0),0
}
endtemplate Interneuron
//************************************************************************************
//UNITS
//Category Variable Units
//Time t [ms]
//Voltage v [mV]
//Current i [mA/cm2] (distributed) [nA] (point process)
//Concentration ko, ki, etc. [mM]
//Specific capacitance cm [uf/cm2]
//Length diam, L [um]
//Conductance g [S/cm2] (distributed) [uS] (point process)
//Cytoplasmic resistivity Ra [ohm cm]
//Resistance Ri [10E6 ohm]